參數(shù)資料
型號(hào): OM6059SB
英文描述: High Current, High Voltage 600V , 48 Amp N-Channel, MOSFET(大電流,高電壓,600V , 48A,N溝道,MOS場(chǎng)效應(yīng)管)
中文描述: 高電流,高電壓600V,48安培N溝道,場(chǎng)效應(yīng)管(大電流,高電壓在600V,48A條,?溝道來(lái)說(shuō),MOS場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 29K
代理商: OM6059SB
3.1
OM6056SB - OM6061SB
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Parameter
Symbol
OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB
Unit
Drain Source Voltage
V
DS
100
200
500
600
800
1000
V
Drain Gate Voltage (R
GS
= 1.0 M
)
V
DGR
100
200
500
600
800
1000
V
Continuous Drain Current @ T
C
= 25°C2
I
D
190
105
58
48
34
18
A
Continuous Drain Current @ TC = 100°C 2
I
D
82
44
25
19
15
7.5
A
Pulsed Drain Current1
I
DM
440
250
130
110
78
42
A
Max. Power Dissipation @ T
C
= 25°C
P
D
570
W
Max. Power Dissipation @ T
C
= 100°C
P
D
245
W
Linear Derating Factor Junction-to-Case
4.35
W/°C
Linear Derating Factor Junction-to-Ambient
.033
W/°C
Operating and Storage Temp. Range
T
J
, T
stg
-55 to +150
° C
Lead Temperature (1/16" from case for 10 sec.)
230
° C
Notes: 1. Pulse Test:
Pulse Width
300
μ
sec, Duty Cycle
2%.
2. Package Pin Limitation:
100 Amps @ 125°C.
THERMAL RESISTANCE (MAXIMUM)
@ T
A
= 25
°
C
Junction-to-Case
R
thJC
R
thJA
.23
° C/W
Junction-to-Ambient (Free Air Operation)
30
° C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Test Condition
Symbol
Part No.
Min.
Max.
Units
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
V
GS(th)
All
2.0
4.0
V
Gate-Source Leakage Current
V
GS
= ±20 V
DC
I
GSS
All
±100
nA
Off State Drain-Source Leakage
V
DS
= V
DSS
x 0.8 T
C
= 25°C
I
DSS
All
10
μA
V
GS
= 0V T
C
= 125°C
I
DSS
All
.10
mA
OM6056SB
100
OM6057SB
200
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250 μA
V
DSS
OM6058SB
500
V
OM6059SB
600
OM6060SB
800
OM6061SB
1000
OM6056SB
.008
OM6057SB
.018
Static Drain-Source On-Resistance
V
GS
= 10V, I
D
= I
D25
x 0.5
R
DS(on)
OM6058SB
.095
OM6059SB
.140
OM6060SB
.300
OM6061SB
.500
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
Sect. 3.1 data sheets 8/7/00 11:52 AM Page 108
相關(guān)PDF資料
PDF描述
OM6060SB High Current, High Voltage 800V , 34 Amp N-Channel, MOSFET(大電流,高電壓,800V , 34A,N溝道,MOS場(chǎng)效應(yīng)管)
OM6061SB High Current, High Voltage 1000V , 18 Amp N-Channel, MOSFET(大電流,高電壓,1000V , 18A,N溝道,MOS場(chǎng)效應(yīng)管)
OM6056SB High Current, High Voltage 100V , 190 Amp N-Channel, MOSFET(大電流,高電壓,100V , 19A,N溝道,MOS場(chǎng)效應(yīng)管)
OM6057SB High Current, High Voltage 200V , 105 Amp N-Channel, MOSFET(大電流,高電壓,200V , 105A,N溝道,MOS場(chǎng)效應(yīng)管)
OM6058SB High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大電流,高電壓,500V , 58A,N溝道,MOS場(chǎng)效應(yīng)管)
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