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| 型號： | OM6056SB |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE |
| 中文描述： | 在全封閉隔離電源功率MOSFET封裝結(jié)構(gòu) |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 29K |
| 代理商： | OM6056SB |
3.1
OM6056SB - OM6061SB
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Parameter
Symbol
OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB
Unit
Drain Source Voltage
V
DS
100
200
500
600
800
1000
V
Drain Gate Voltage (R
GS
= 1.0 M
)
V
DGR
100
200
500
600
800
1000
V
Continuous Drain Current @ T
C
= 25°C2
I
D
190
105
58
48
34
18
A
Continuous Drain Current @ TC = 100°C 2
I
D
82
44
25
19
15
7.5
A
Pulsed Drain Current1
I
DM
440
250
130
110
78
42
A
Max. Power Dissipation @ T
C
= 25°C
P
D
570
W
Max. Power Dissipation @ T
C
= 100°C
P
D
245
W
Linear Derating Factor Junction-to-Case
4.35
W/°C
Linear Derating Factor Junction-to-Ambient
.033
W/°C
Operating and Storage Temp. Range
T
J
, T
stg
-55 to +150
° C
Lead Temperature (1/16" from case for 10 sec.)
230
° C
Notes: 1. Pulse Test:
Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2%.
2. Package Pin Limitation:
100 Amps @ 125°C.
THERMAL RESISTANCE (MAXIMUM)
@ T
A
= 25
°
C
Junction-to-Case
R
thJC
R
thJA
.23
° C/W
Junction-to-Ambient (Free Air Operation)
30
° C/W
PRELIMINARY ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Test Condition
Symbol
Part No.
Min.
Max.
Units
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
V
GS(th)
All
2.0
4.0
V
Gate-Source Leakage Current
V
GS
= ±20 V
DC
I
GSS
All
±100
nA
Off State Drain-Source Leakage
V
DS
= V
DSS
x 0.8 T
C
= 25°C
I
DSS
All
10
μA
V
GS
= 0V T
C
= 125°C
I
DSS
All
.10
mA
OM6056SB
100
OM6057SB
200
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250 μA
V
DSS
OM6058SB
500
V
OM6059SB
600
OM6060SB
800
OM6061SB
1000
OM6056SB
.008
OM6057SB
.018
Static Drain-Source On-Resistance
V
GS
= 10V, I
D
= I
D25
x 0.5
R
DS(on)
OM6058SB
.095
OM6059SB
.140
OM6060SB
.300
OM6061SB
.500
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
Sect. 3.1 data sheets 8/7/00 11:52 AM Page 108
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