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參數(shù)資料
| 型號： | OM6012SA |
| 英文描述： | 500V , 8Amp, N Channel MOSFET(500V , 8A,N溝道，MOS場效應(yīng)管) |
| 中文描述： | 500V及8Amp，N溝道MOSFET（500V及8A條，?溝道來說，MOS場效應(yīng)管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | OM6012SA |
OM6009SA - OM6112SA
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
OM6009
OM6109
OM6010
OM6110
OM6011
OM6111
OM6012
OM6112
Parameter
Units
V
DS
Drain-Source Voltage
100
200
400
500
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
100
200
400
500
V
I
D
@ T
C
= 25°C
Continuous Drain Current
2
± 22
± 18
± 10
± 8
A
I
D
@ T
C
= 100°C
Continuous Drain Current
2
± 17
± 11
± 6
± 5
A
I
DM
Pulsed Drain Current
1
± 88
± 72
± 40
± 32
A
V
GS
Gate-Source Volt. (Unclamped Gate)
± 20
± 20
± 20
± 20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
125
125
125
125
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1.0
1.0
1.0
1.0
W/°C
Junction To Ambient Linear Derating Factor
.020
.020
.020
.020
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature
(1/16" from case for 10 secs.)
300
300
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 2%.
2 Package Pin Limitation = 25 Amps
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.0
°C/W
R
thJA
Junction-to-Ambient
50
°C/W
Free Air Operation
.144 DIA.
.050
.260
.685
.800
.545
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
MECHANICAL OUTLINE
.040 DIA.
.150
.260
.040
.940
.500
MIN.
.150
2 .125
.290
.2 PLS.
.200
.540
.250
.740
.540
.100
.300
1
2
3
1 2 3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
NOTE:
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
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