參數(shù)資料
型號(hào)： OM6004SR
英文描述： SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
中文描述： 500V單N溝道高可靠性，在封裝MOSFET的一項(xiàng)D2
文件頁數(shù)： 2/4頁
文件大?。?/td> 44K
代理商： OM6004SR
3
O
3
ELECTRICAL CHARACTERISTICS:
(
T
= 25°C unless otherwise noted)
STATIC P/N OM6101ST / OM6001ST (100V)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSS
Gate-Body Leakage (OM6101)
I
GSS
Gate-Body Leakage (OM6001)
I
DSS
Zero Gate Voltage Drain
0.1
Current
0.2
ELECTRICAL CHARACTERISTICS:
(
T
= 25°C unless otherwise noted)
STATIC P/N OM6102ST / OM6002 ST (200V)
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
200
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSS
Gate-Body Leakage (OM6102)
I
GSS
Gate-Body Leakage (OM6002)
I
DSS
Zero Gate Voltage Drain
0.1
Current
0.2
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
4.0
± 500
± 100
0.25
V
nA
nA
mA
4.0
± 500
± 100
0.25
V
nA
nA
mA
1.0
mA
1.0
mA
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
14
A
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
9.0
A
1.2
1.60
V
V
GS
= 10 V, I
D
= 8 A
1.25
2.2
V
V
GS
= 10 V, I
D
= 5.0 A
R
DS(on)
0.20
V
GS
= 10 V, I
D
= 8 A
R
DS(on)
0.44
V
GS
= 10 V, I
D
= 5.0 A
R
DS(on)
0.40
V
GS
= 10 V, I
D
= 8 A,
T
C
= 125 C
R
DS(on)
0.88
V
GS
= 10 V, I
D
= 5.0 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 8 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
8 A
R
g
= 7.5
W
, V
DS
= 10 V
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
3.0
5.8
780
150
55
9
18
45
27
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 5.0 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75V, I
D
@
5.0 A
R
g
= 7.5
W
, V
GS
=10 V
750
250
100
15
35
38
23
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
- 14
A
Modified MOSPOWER
- 9
A
Modified MOSPOWER
symbol showing
symbol showing
- 56
A
the integral P-N
- 36
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -14 A, V
GS
= 0
T
C
= 25 C, I
S
= -12 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -9 A, V
GS
= 0
T
C
= 25 C, I
S
= -8 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 2.5
V
V
- 2
V
V
100
ns
250
ns
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
相關(guān)PDF資料
PDF描述
OM6004ST SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
OM6101SR 100V Single N-Channel Hi-Rel MOSFET in a D2 package
OM6101ST SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
OM6102SR 200V Single N-Channel Hi-Rel MOSFET in a D2 package
OM6102ST 200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
OM6004ST 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
OM6005 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE
OM6005SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE
OM6006SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE
OM6007SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE
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