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參數(shù)資料
| 型號(hào)： | OM1N100SA |
| 英文描述： | 1000V, 1.0 Amp, N-Channel MOSFET(1000V, 1.0 A，N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 1000V的1.0安培，N通道MOSFET（1000V的1.0膫n溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 40K |
| 代理商： | OM1N100SA |
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
OM1N100SA OM3N100SA OM5N100SA OM6N100SA
Units
OM1N100ST
OM3N100ST
I
AR
Avalanche Current
(Repetitive or Non-Repetitive)
T
j
= 25°C
3.5
3.5
6
6
A
T
j
= 100°C
2
2
3.4
3.4
A
E
AS
Single Pulse Avalanche Energy
130
130
850
850
mJ
Starting T
j
= 25°C, I
D
= I
AR
,
V
DD
= 25V
E
AR
Repetitive Avalanche Energy
6
6
16
16
mJ
(Pulse width limited by T
J
max,
d
< 1%)
V
DS
Drain-Source Voltage
1000
1000
1000
1000
V
V
DGR
Drain-Source Voltage (R
GS
= 20k )
1000
1000
1000
1000
V
I
D
@ T
C
= 25°C
Continuous Drain Current
.50
3.5
5.0
6.0
A
I
D
@ T
C
= 100°C
Continuous Drain Current
.30
2.0
3.1
3.7
A
I
DM
Pulsed Drain Current
1
14
14
24
24
A
V
GS
Gate-Source Voltage
±20
±20
±20
±20
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation
90
90
130
130
W
P
D
@ T
C
=100°C
Maximum Power Dissipation
32
32
51
51
W
Junction-To-Case
Linear Derating Factor
.87
.87
2.10
2.10
W/°C
Junction-To-Ambient Linear Derating Factor
.020
.020
.020
.020
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature
(1/16" from case for 10secs.)
300
300
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 2%.
THERMAL RESISTANCE
R
thJC
Junction-To-Case Max.
1.15
1.15
.48
.48
°C/W
MECHANICAL OUTLINE
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
TO-257AA
TO-254AA
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
D S G
FET 1
D
S
G
FET 3
D
S
G
FET 3
D
S
G
FET 4
D
S
G
FET 2
G
S
D
FET 1
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA
MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
OM1N100SA/ST Series
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OM1N100ST | 1000V, 1.0 Amp, N-Channel MOSFET(1000V, 1.0 A，N溝道MOS場(chǎng)效應(yīng)管) |
| OM3N100SA | 1000V, 3.5 Amp, N-Channel MOSFET(1000V, 3.5 A，N溝道MOS場(chǎng)效應(yīng)管) |
| OM3N100ST | 1000V, 3.5 Amp, N-Channel MOSFET(1000V, 3.5 A，N溝道MOS場(chǎng)效應(yīng)管) |
| OM6001SR | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| OM6001ST | 100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM1N100ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE |
| OM200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hearing Aid Amplifier |
| OM2005 | 制造商:Ohmite Mfg Co 功能描述: |
| OM2005E-R58 | 制造商:Ohmite Mfg Co 功能描述:Carbon Film Resistors 20 Ohm 1W 5% 500 Volt |
| OM200A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 20A I(D) |
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