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參數(shù)資料
| 型號： | OM11N55SA |
| 英文描述： | 550V, 11 Amp, N-Channel MOSFET(550V, 11A N溝道MOS場效應(yīng)管) |
| 中文描述： | 550V，11安培，N通道MOSFET（550V，11A條?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | OM11N55SA |
3.1 - 21
OM11N60SA - OM11N55SA
3.1
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
OM11N60
OM11N55
Units
V
DGR
Drain Source Voltage
600
550
V
V
DS
Drain Gate Voltage (R
GS
= 1.0 M )
600
550
V
I
D
Continuous Drain Current @ T
C
= 25°C
11
11
A
I
D
Continuous Drain Current @ T
C
= 100°C
7.2
7.2
A
I
DM
Pulsed Drain Current
1
52
52
A
P
D
Max. Power Dissipation @ T
C
= 25°C
125
125
W
P
D
Max. Power Dissipation @ T
C
= 100°C
50
50
W
Linear Derating Factor Jct. to Case
1.0
1.0
W/°C
Linear Derating Factor Jct. to Ambient
.020
.020
W/°C
T
J
, T
stg
Operating and Storage Temp. Range
-55 to 150
°C
Lead Temperature
(1/16" from case for 10 sec.)
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 2%.
THERMAL RESISTANCE
(Maximum at T
A
= 25°C)
R
thJC
Junction-to-Case
1.0
1.0
°C/W
R
thJA
Junction-to-Ambient (Free Air Operation)
50
50
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM11N55SAZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 11A I(D) | TO-259AA |
| OM11N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFET IN HERMETIC ISOLATED |
| OM11N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V Single N-Channel Hi-Rel MOSFET in a TO-254AA package |
| OM11N60CSA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-254AA |
| OM11N60CSAZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-259AA |
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