參數(shù)資料
型號: NZL5V6ATT1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SC75 Dual Common Anode Zener for ESD Protection
中文描述: UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
封裝: PLASTIC, SC-75, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 126K
代理商: NZL5V6ATT1
NZL5V6ATT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3, or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni
Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Steady State Power
1 Diode (Note 1)
P
D
150
mW
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
ESD Discharge
IEC61000
4
2, Air Discharge
IEC61000
4
2, Contact Discharge
V
PP
15
8
kV
Lead Solder Temperature (10 seconds duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR
4 board with min pad.
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
V
BR
@ 1 mA (V)
Leakage Current
I
RM
@ V
RM
= 3.0 V
V
C
@ I
PP
(Note 2)
Typical
Capacitance
@ 0 V Bias
@ 1 MHz
Max
V
F
@ I
F
= 10 mA
Device
Min
Nom
Max
( A)
V
C
(V)
I
PP
(A)
(pF)
(V)
NZL5V6
5.3
5.6
5.9
1.0
9.97
6.11
40
1.25
2. Surge current waveform per Figure 2 and clamping voltage (V
C
) per Figure 6.
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