參數(shù)資料
型號: NZF220TT1
廠商: ON SEMICONDUCTOR
元件分類: 數(shù)據(jù)傳輸濾波器
英文描述: EMI Filter with ESD Protection(帶ESD保護功能的EMI濾波器)
中文描述: FERRITE CHIP
封裝: PLASTIC, SC-75, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 36K
代理商: NZF220TT1
NZF220TT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Min
Typ
Max
Unit
V
Z
Zener Breakdown Voltage, @ I
ZT
= 1 mA
6.0
8.0
V
I
r
Zener Leakage Current, @ V
R
= 3 V
N/A
1.0
A
V
F
Zener Forward Voltage, @ I
F
= 50 mA
N/A
1.25
V
Capacitance
Zener Internal Capacitance, @ 0 V Bias
7.0
10
pF
Capacitance
Zener/Resistor Array Line Capacitance
17.6
26.4
pF
Resistor
Resistance
90
110
F
C
(Note 2)
2. 50 Source and 50 Lead Termination per Figure 2
Cutoff Frequency
220
MHz
Applications Information
Suppressing Noise at the Source
Filter all I/O signals leaving the noisy environment
Locate I/O driver circuits close to the connector
Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
Filter all I/O signals entering the unit
Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
Use multilayer PCBs to minimize power and ground inductance
Keep clock circuits away from the I/O connector
Ground planes should be used whenever possible
Minimize the loop area for all high speed signals
Provide for adequate power decoupling
ESD Protection
Locate the suppression devices as close to the I/O connector as possible
Minimize the PCB trace length to the suppression device
Minimize the PCB trace length for the ground return for the suppression device
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