參數(shù)資料
型號： NZ48F4000L0ZTQ0
廠商： INTEL CORP
元件分類： PROM
英文描述： 1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
中文描述： 16M X 16 FLASH 1.8V PROM, PBGA80
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-88/80
文件頁數(shù)： 1/100頁
文件大?。?/td> 1373K
代理商： NZ48F4000L0ZTQ0
1.8VoltIntelStrataFlash
Wireless
Memorywith3.0-VoltI/O(L30)
28F640L30,28F128L30,28F256L30
Datasheet
ProductFeatures
The1.8VoltIntelStrataFlash
wirelessmemorywith3-Volt
I/Oproductisthelatestgenerationof
IntelStrataFlash
memorydevicesfeaturingflexible,multiple-partition,dualoperation.Itprovideshigh
performancesynchronous-burstreadmodeandasynchronousreadmodeusing1.8voltlow-voltage,multi-
levelcell(MLC)technology.
Themultiple-partitionarchitectureenablesbackgroundprogrammingorerasingtooccurinonepartition
whilecodeexecutionordatareadstakeplaceinanotherpartition.Thisdual-operationarchitecturealso
allowstwoprocessorstointerleavecodeoperationswhileprogramanderaseoperationstakeplaceinthe
background.
The
1.8VoltIntelStrataFlash
wirelessmemorywith3-Volt
I/OdeviceismanufacturedusingIntel
0.13μmETOXVIIIprocesstechnology.Itisavailableinindustry-standardchipscalepackaging.
.
■
HighperformanceRead-While-Write/Erase
— 85nsinitialaccess
— 52MHzwithzerowaitstate,17nsclock-to-data
outputsynchronous-burstmode
— 25nsasynchronous-pagemode
— 4-,8-,16-,andcontinuous-wordburstmode
— Burstsuspend
— ProgrammableWAITconfiguration
— BufferedEnhancedFactoryProgramming
(BufferedEFP):3.5μs/byte(Typ)
— 1.8Vlow-powerbufferedandnon-buffered
programming@10μs/byte(Typ)
■
Architecture
— Asymmetrically-blockedarchitecture
— Multiple8-Mbitpartitions:64Mband128Mb
devices
— Multiple16-Mbitpartitions:256Mbdevices
— Four16-KWordparameterblocks:topor
bottomconfigurations
— 64K-Wordmainblocks
— Dual-operation:Read-While-Write(RWW)or
Read-While-Erase(RWE)
— Statusregisterforpartitionanddevicestatus
■
Power
— 1.7V-2.0VV
CC
operation
— I/Ovoltage:2.2V-3.3V
— Standbycurrent:30μA(Typ)
— 4-Wordsynchronousreadcurrent:17mA(Typ)
@54MHz
— AutomaticPowerSavings(APS)mode
■
Software
— 20μs(Typ)programsuspend
— 20μs(Typ)erasesuspend
— IntelFlashDataIntegrator(FDI)optimized
— BasicCommandSet(BCS)andExtended
CommandSet(ECS)compatible
— CommonFlashInterface(CFI)capable
■
Security
—OTPspace:
— 64uniquedeviceidentifierbits
— 64user-programmableOTPbits
— Additional2048user-programmableOTP
bits
— Absolutewriteprotection:V
PP
=GND
— Power-transitionerase/programlockout
— Individualzero-latencyblocklocking
— Individualblocklock-down
■
QualityandReliability
— Expandedtemperature:–25°Cto+85°C
— Minimum100,000erasecyclesperblock
— ETOXVIIIprocesstechnology(0.13μm)
■
DensityandPackaging
— 64-,128-and256-MbitdensityinVFBGA
packages
— 128/0,and256/0DensityinStacked-CSP
— 16-bitwidedatabus
OrderNumber:251903-003
April2003
Notice:
Thisdocumentcontainsinformationonproductsinthedesignphaseof
development.Theinformationhereissubjecttochangewithoutnotice.Donotfinalize
adesignwiththisinformation.
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NZ48F400BBY 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
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NZ48F400BTZ 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
NZ48F400QBY 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
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