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參數(shù)資料
| 型號： | NX8562LB |
| 廠商： | NEC Corp. |
| 英文描述： | 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE |
| 中文描述： | 1 550 nm的連續(xù)光源InGaAsP的應變量子阱激光器激光二極管模塊 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | NX8562LB |
4
NX8562LB
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Monitor PD: T
LD
= 25
°
C, T
C
=
20 to +65
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Monitor Current
I
m
P
f
= 20 mW, V
R
= 5 V
100
μ
A
Dark Current
I
D
V
R
= 5 V
2
10
nA
Tracking Error
γ
*1
I
m
= const.
0.5
dB
*1
γ
= 10 log
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Thermistor and TEC: T
LD
= 25
°
C, T
C
=
20 to +65
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Thermistor Resistance
R
T
LD
= 25
°
C
9.5
10.0
10.5
k
B Constant
B
3 300
3 400
3 500
K
Cooler Current
I
C
T = 65
T
set
, P
f
= 20 mW
1.0
A
Cooler Voltage
V
C
T = 65
T
set
, P
f
= 20 mW
2.0
V
P
f
20 mW
P
f
(mW)
0
I
m
I
m
T
LD
= T
C
= 25 C
T
LD
= 25 C, T
C
= –20 to +65 C
(@ P
f
(25 C) = 20 mW)
20
P
f
相關PDF資料 |
PDF描述 |
|---|---|
| NX8562LB-BA | 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE |
| NX8562LB-CA | 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE |
| NX8567SAS477-CC | EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NX8562LB279 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| NX8562LB279-BA | 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) |
| NX8562LB279-CA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| NX8562LB287 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| NX8562LB287-BA | 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) |
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