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參數(shù)資料
| 型號(hào)： | NX8561JC |
| 廠商： | NEC Corp. |
| 英文描述： | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| 中文描述： | InGaAsP的應(yīng)變直流異質(zhì)結(jié)激光二極管模塊1 625納米遙測應(yīng)用 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | NX8561JC |
Data Sheet P14128EJ2V0DS00
11
NX7660JC
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER mW MAX
WAVELENGTH nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
NEC Corporation
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NX8561JD | 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| NX7660JC | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX7660JC-BA | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX7660JC-CA | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX8562LB | 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NX8561JD | 制造商:NEC 制造商全稱:NEC 功能描述:1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| NX8562 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) |
| NX8562-AZ | 制造商:CEL 制造商全稱:CEL 功能描述:NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN) |
| NX8562LB | 制造商:NEC 制造商全稱:NEC 功能描述:CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
| NX8562LB279 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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