參數(shù)資料
型號(hào)： NX3008PBKT
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 30 V, 200 mA P-channel Trench MOSFET
中文描述： SMALL SIGNAL, FET
封裝： PLASTIC, SC-75, 6 PIN
文件頁數(shù)： 1/16頁
文件大?。?/td> 868K
代理商： NX3008PBKT
1.
Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
Static characteristics
R
DSon
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NX3008PBKT
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
ST1
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
j
= 25 °C
Min
-
-8
Typ
-
-
-
Max
-30
8
-200 mA
Unit
V
V
V
GS
= -4.5 V; T
amb
= 25 °C
[1]
-
drain-source on-state
resistance
V
GS
= -4.5 V;
I
D
= -200 mA; T
j
= 25 °C
-
2.8
4.1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NX3008PBKT,115 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008PBKV 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 220MA SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-220mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBKV,115 功能描述:MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008PBKW 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 200MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBKW,115 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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