- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363716 > NUS3065MUTAG (ON SEMICONDUCTOR) Low Profile Overvoltage Protection IC with Integrated MOSFET PDF資料下載
參數(shù)資料
| 型號： | NUS3065MUTAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 電源管理 |
| 英文描述： | Low Profile Overvoltage Protection IC with Integrated MOSFET |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PBGA8 |
| 封裝： | 3 X 2.50 MM, 0.65 MM PITCH, TLLGA-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 119K |
| 代理商： | NUS3065MUTAG |
Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 0
Publication Order Number:
NUS3065/D
NUS3065MU
Low Profile Overvoltage
Protection IC with
Integrated MOSFET
This device represents a new level of safety and integration by
combining the NCP345 overvoltage protection circuit (OVP) with a
30 V Pchannel power MOSFET. It is specifically designed to protect
sensitive electronic circuitry from overvoltage transients and power
supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
The OVP IC is optimized for applications that use an external
ACDC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. It has a nominal overvoltage
threshold of 6.85 V which makes them ideal for single cell LiIon as
well as 3/4 cell NiCD/NiMH applications.
Features
OvervoltageTurnOff Time of Less Than 1.0 s
Accurate Voltage Threshold of 6.85 V, Nominal
Undervoltage Lockout Protection; 2.8 V, Nominal
High Accuracy Undervoltage Threshold of 2.0%
30 V Integrated PChannel Power MOSFET
Low R
DS(on)
= 66 m @ 4.5 V
Low Profile 0.55 mm height, 2.5 X 3.0 mm LLGA Package Suitable
for Portable Applications
Maximum Solder Reflow Temperature @ 260
°
C
This device is manufactured with a PbFree external lead finish only.
This is a PbFree Device
Benefits
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Applications
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUS3065MUTAG
TLLGA8
(PbFree)
3000 /
Tape & Reel
PIN CONNECTIONS
TLLGA8
CASE 517AH
MARKING
DIAGRAM
OUT
SRC
IN
CNTRL
DRAIN
(Bottom View)
3065
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
3065
AYWW
1
GATE
GND
DRAIN
4
VCC
8
7
6
5
1
2
3
4
1
8
相關PDF資料 |
PDF描述 |
|---|---|
| NVM3060 | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| NVP3000 | ASIC Solution for 1-channel DVR application using HDD |
| NW6003 | TYPE II CALLER ID DECODER |
| NW6005 | ENHANCED TYPE II CALLER ID DECODER |
| NW6006 | ENHANCED TYPE II CALLER ID DECODER WITH STUTTER DIAL TONE DETECTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NUS3116MT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Main Switch Power MOSFET and Dual Charging BJT |
| NUS3116MTR2G | 功能描述:MOSFET OSPI QUAD BUS BUFFER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NUS5530MN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |
| NUS5530MNR2G | 功能描述:MOSFET INTEGRATED POWER BJT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NUS5531MT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Main Switch Power MOSFET and Single Charging BJT |
發(fā)布緊急采購，3分鐘左右您將得到回復。