- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361165 > NTS4001N (ON SEMICONDUCTOR) 30V,270mA,Single N Channel,SC70 Small Signal MOSFET(30V,270mA,N溝道小信號MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTS4001N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 30V,270mA,Single N Channel,SC70 Small Signal MOSFET(30V,270mA,N溝道小信號MOSFET) |
| 中文描述： | 30V的，二百七十零毫安，單個N頻道，采用SC70小信號MOSFET（30V的，二百七十零毫安，?溝道小信號MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 127K |
| 代理商： | NTS4001N |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 3
1
Publication Order Number:
NTS4001N/D
NTS4001N
Small Signal MOSFET
30 V, 270 mA, Single N
Channel, SC
70
Features
Low Gate Charge for Fast Switching
Small Footprint
30% Smaller than TSOP
6
ESD Protected Gate
Pb
Free Package is Available
Applications
Low Side Load Switch
Li
Ion Battery Supplied Devices
Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain
to
Source Voltage
V
DSS
30
V
Gate
to
Source Voltage
V
GS
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
I
D
270
mA
T
A
= 85
°
C
T
A
= 25
°
C
200
Power Dissipation
(Note 1)
Steady
State
P
D
330
mW
Pulsed Drain Current
t =10 s
I
DM
800
mA
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Source Current (Body Diode)
I
S
270
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTS4001NT1
SC
70
3000/Tape & Reel
(Top View)
SC
70 / SOT
323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
S
2
1
http://onsemi.com
TD
M
= Device Code
= Date Code*
= Pb
Free Package
SC
70/SOT
323 (3 LEADS)
Drain
Gate
3
1
2
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
30 V
1.0 @ 4.0 V
1.5 @ 2.5 V
270 mA
NTS4001NT1G
SC
70
(Pb
Free)
3000/Tape & Reel
TD M
Source
3
1
2
3
G
D
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| NTV0512M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1205M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1209M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1212M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
| NTV1215M | 3kVDC Isolated 1W Dual Output SM DC-DC Converters |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTS4001NT1 | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTS4001NT1G | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTS4001NT1G-CUT TAPE | 制造商:ON 功能描述:NTS Series N-Channel 30 V 1 Ohm 330 mW SMT Small Signal MOSFET - SOT-323 |
| NTS4101P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
| NTS4101P_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
發(fā)布緊急采購，3分鐘左右您將得到回復。