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參數(shù)資料
| 型號： | NTP60N06G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60 V, 60 A, N−Channel TO−220 and D2PAK |
| 中文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 85K |
| 代理商： | NTP60N06G |
NTP60N06, NTB60N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
72.3
69.8
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
2.85
8.0
4.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 30 Adc)
R
DS(on)
11.5
14
m
Static DraintoSource OnVoltage (Note 2)
(V
GS
= 10 Vdc, I
D
= 60 Adc)
(V
GS
= 10 Vdc, I
D
= 30 Adc, T
J
= 150
°
C)
V
DS(on)
0.715
1.43
1.01
Vdc
Forward Transconductance (Note 2) (V
DS
= 8.0 Vdc, I
D
= 12 Adc)
g
FS
35
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
2300
3220
pF
Output Capacitance
C
oss
660
925
Transfer Capacitance
C
rss
144
300
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(on)
25.5
50
ns
Rise Time
= 30 Vdc, I
= 60 Adc,
(V
DD
D
60 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 ) (Note 2)
t
r
180.7
360
TurnOff Delay Time
t
d(off)
94.5
200
Fall Time
t
f
142.5
300
Gate Charge
(V
DS
= 48 Vdc, I
D
= 60 Adc,
V
GS
= 10 Vdc) (Note 2)
Q
T
62
81
nC
Q
1
10.8
Q
2
29.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 60 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 45 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.99
0.87
1.05
Vdc
Reverse Recovery Time
(I
S
= 60 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 2)
V
t
rr
64.9
ns
t
a
44.1
t
b
20.8
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
Q
RR
0.146
C
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