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參數(shù)資料
| 型號(hào)： | NTP13N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement-Mode TO-220(13A,100V,N通道，增強(qiáng)模式，TO-200封裝的功率MOSFET) |
| 中文描述： | 13 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | NTP13N10 |
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 6
1
Publication Order Number:
NTP13N10/D
NTP13N10
Preferred Device
Power MOSFET
13 A, 100 V, N
Channel
Enhancement
Mode TO
220
Features
Source
to
Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Pb
Free Package is Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
100
Vdc
Drain
to
Source Voltage (R
GS
= 1.0 M
Ω
)
V
DGR
100
Vdc
Gate
to
Source Voltage
Continuous
Non
Repetitive (t
p
10 ms)
V
GS
V
GSM
20
30
Vdc
Drain Current
Continuous @ T
A
25
°
C
Continuous @ T
A
100
°
C
Pulsed (Note 1)
I
D
I
D
I
DM
13
8.0
39
Adc
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
64.7
0.43
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Drain
to
Source Avalanche Energy
Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 13 A, L = 1.0 mH, R
G
= 25
Ω
)
E
AS
85
mJ
Thermal Resistance
Junction
to
Case
R
θ
JC
2.32
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
NTP13N10
TO
220AB
50 Units/Rail
TO
220AB
CASE 221A
STYLE 5
12
3
4
N
Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
13N10
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
13N10
AYWW
1
Gate
3
Source
4
Drain
2
Drain
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
V
DSS
R
DS(ON)
TYP
I
D
MAX
100 V
165 m
Ω
@ 10 V
13 A
NTP13N10G
TO
220AB
(Pb
Free)
50 Units/Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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