參數(shù)資料
型號(hào)： NTLJF4156N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管)
中文描述： 功率MOSFET和肖特基二極管（功率MOSFET的和肖特基二極管）
文件頁數(shù)： 1/8頁
文件大小： 99K
代理商： NTLJF4156N
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 4
1
Publication Order Number:
NTLJF4156N/D
NTLJF4156N
Power MOSFET and
Schottky Diode
30 V, 4.6 A, Cool NChannel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
Features
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
CoPackaged MOSFET and Schottky For Easy Circuit Layout
R
DS(on)
Rated at Low V
GS(on)
Levels, V
GS
= 1.5 V
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Low V
F
Schottky
This is a PbFree Device
Applications
DCDC Converters
LiIon Battery Applications in Cell Phones, PDA’s, Media Players
Color Display and Camera Flash Regulators
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
±
8.0
3.7
V
GatetoSource Voltage
Continuous Drain
Current (Note 1)
V
A
Steady
State
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
2.7
t
≤
5 s
Steady
State
4.6
Power Dissipation
(Note 1)
T
J
= 25
°
C
P
D
1.5
W
t
≤
5 s
2.3
Continuous Drain
Current (Note 2)
Steady
State
T
J
= 25
°
C
T
J
= 85
°
C
I
D
2.5
A
1.8
Power Dissipation
(Note 2)
T
J
= 25
°
C
P
D
0.71
Pulsed Drain Current
t
p
= 10 s
I
DM
20
A
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Source Current (Body Diode) (Note 2)
I
S
T
L
2.4
A
°
C
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
260
1
2
3
6
5
4
A
N/C
D
K
G
S
http://onsemi.com
30 V
30 V
90 m @ 2.5 V
70 m @ 4.5 V
2.0 A
R
DS(on)
MAX
4.6 A
0.47 V
I
D
MAX
(Note 1)
V
(BR)DSS
MOSFET
SCHOTTKY DIODE
V
R
MAX
I
F
MAX
V
F
TYP
125 m @ 1.8 V
250 m @ 1.5 V
G
S
NCHANNEL MOSFET
D
K
A
SCHOTTKY DIODE
JL
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
JLM
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
(Top View)
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
K
D
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NTLJF4156NT1G 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTLJF4156NTAG 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTLJS1102P 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package
NTLJS1102PTAG 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTLJS1102PTBG 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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