參數(shù)資料
型號(hào)： NTHD4P02FT1G
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET and Schottky Diode
中文描述： 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, CASE 1206A-03, CHIPFET-8
文件頁數(shù)： 1/8頁
文件大?。?/td> 74K
代理商： NTHD4P02FT1G
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 4
1
Publication Order Number:
NTHD4P02F/D
NTHD4P02F
Power MOSFET and
Schottky Diode
20 V, 3.0 A, Single PChannel with
3.0 A Schottky Barrier Diode, ChipFET
Features
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP6 Package with Similar Thermal
Characteristics
Independent Pinout to each Device to Ease Circuit Design
Ultra Low V
F
Schottky
PbFree Package is Available
Applications
LiIon Battery Charging
High Side DCDC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Units
DraintoSource Voltage
V
DSS
V
GS
I
D
20
V
GatetoSource Voltage
±
12
V
Continuous Drain
Current
Steady
State
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
2.2
A
1.6
t
5 s
I
D
3.0
A
Pulsed Drain
Current
t
p
= 10 s
I
DM
9.0
A
Power Dissipation
Steady
State
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
P
D
1.1
W
0.6
t
5 s
2.1
Continuous Source Current (Body Diode)
I
S
2.1
A
Operating Junction and Storage
Temperature
T
J
, T
STG
55 to 150
°
C
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V
RRM
20
V
DC Blocking Voltage
V
R
20
V
Average Rectified
Forward Current
Steady
State
T
J
= 25 C
I
F
2.2
A
t
5 s
3.0
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
C2 = Specific Device Code
M = Month Code
Device
Package
Shipping
ORDERING INFORMATION
NTHD4P02FT1
ChipFET
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 3
PIN
CONNECTIONS
MARKING
DIAGRAM
C
M
1
2
3
4
8
7
6
5
http://onsemi.com
G
D
PChannel MOSFET
S
C
A
SCHOTTKY DIODE
8
7
6
5
4
3
2
1
C
C
D
D
A
A
S
G
NTHD4P02FT1G
ChipFET
(Pbfree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
20 V
20 V
200 m @ 2.5 V
130 m @ 4.5 V
0.510 V
R
DS(on)
TYP
3.0 A
3.0 A
I
D
MAX
V
(BR)DSS
MOSFET
SCHOTTKY DIODE
V
R
MAX
I
F
MAX
V
F
TYP
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