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參數(shù)資料
| 型號(hào)： | NTF6P02T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223(-6.0A,-20V，P通道，SOT-23封裝的功率MOSFET) |
| 中文描述： | 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, TO-261, 4 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | NTF6P02T3 |
Publication Order Number:
NTF6P02T3/D
Semiconductor Components Industries, LLC, 2002
September, 2002 – Rev. 0
1
NTF6P02T3
Power MOSFET
-6.0 Amps, -20 Volts
P–Channel SOT–223
Features
Low R
DS(on)
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
Typical Applications
Power Management in Portables and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
V
DSS
–20
Vdc
Gate–to–Source Voltage
V
GS
±
8.0
Vdc
Drain Current (Note 1)
– Continuous @ T
A
= 25
°
C
– Continuous @ T
A
= 70
°
C
– Single Pulse (t
p
= 10
μ
s)
I
D
I
D
I
DM
–10
–8.4
–35
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C
P
D
8.3
W
Operating and Storage Temperature Range
T
J
, T
stg
–55 to
+150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting T
J
= 25
°
C
(V
DD
= –20 Vdc, V
GS
= –5.0 Vdc,
I
L(pk)
= –10 A, L = 3.0 mH, R
G
= 25 )
E
AS
150
mJ
Thermal Resistance
– Junction to Lead (Note 1)
– Junction to Ambient (Note 2)
– Junction to Ambient (Note 3)
R
θ
JL
R
θ
JA
R
θ
JA
15
71.4
160
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. Steady State.
2. When surface mounted to an FR4 board using 1
″
pad size,
(Cu. Area 1.127 in
2
), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 in
2
), Steady State.
D
G
S
1
2
3
4
–6.0 AMPERES
–20 VOLTS
R
DS(on)
= 44 m (Typ.)
P–Channel
Device
Package
Shipping
ORDERING INFORMATION
NTF6P02T3
SOT–223
4000/Tape & Reel
SOT–223
CASE 318E
STYLE 3
6P02
MARKING
DIAGRAM
AWW
A
WW
6P02
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
3
Source
2
1
Gate
Drain
4 Drain
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF6P02T3/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NTF6P02T3 |
| NTF6P02T3_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -6.0 Amps, -20 Volts |
| NTF6P02T3-D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 |
| NTF6P02T3-D_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 |
| NTF6P02T3G | 功能描述:MOSFET -20V -6A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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