參數(shù)資料
型號(hào): NTEV480
廠商: NTE Electronics, Inc.
元件分類: 壓敏電阻
英文描述: Metal Oxide Varistors (MOV)
中文描述: 金屬氧化物壓敏電阻(MOV)的
文件頁數(shù): 1/3頁
文件大?。?/td> 27K
代理商: NTEV480
NTE1V010 thru NTE1V300
NTE2V010 thru NTEV480
NTE524V13 thru NTE524V48
Metal Oxide Varistors (MOV)
Description:
The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high
transient current handling capability when high voltage is applied. Static resistance is, however, very high under low volt-
age conditions, permitting low standby drain currents.
The NTE 1V Series Varistors have a non–linear voltage/current characteristic as expressed by the relationship:
I = KV
n
Where I = The current in amperes
V = The voltage
K = A constant
n = A constant which shows the dependence of
the voltage V upon the current I. It is called
the voltage–dependant index
Features:
High Transient Current Capability – up to 6500A
Fast Response Time – less than 35ns
Excellent Voltage Clamping Characteristics
Very Low Temperature Coefficient
Low Standby Current
High Energy Capability
The Value for “n” is Greater
Very Low Leakage Current
Low Capacitance
Low Overshoot Characteristics
Electrical Ratings:
Varistor Voltage
The voltage across the varistor at a DC current of 1.0mA.
Energy
The maximum electrical energy which can be dissipated within the varistor by a single impulse of 10 x 1000
μ
s current
waveform with continuous voltage applied. Energy ratings are based on a shift of varistor voltage of less than 10% of the
initial value. The unit is expressed in joules.
Peak Current
The maximum current allowable for a single pulse of 8 x 20
μ
s exponential waveform.
Operating Ambient Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Response Time
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage Temperature Coefficient
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Linear Exponent
NTE1V010 to NTE1V075, NTE2V010 to NTE2V075
NTE1V095 to NTE1V300, NTE2V095 to NTE2V480, NTE524V13 to NTE542V48
Maximum Leakage Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40
°
to +85
°
C
–40
°
to +125
°
C
less than 35ns
less than 0.05%/
°
C
15 to 50
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
greater than 40
. . . . . . . . . . .
10
μ
A
相關(guān)PDF資料
PDF描述
NTE2003 Integrated Circuit Dolby B-Type Noise Reduction Processor
NTE2004 Integrated Circuit Dolby Noise Reduction Circuit
NTE2011 Integrated Circuit 7-Channel Darlington Array/Driver
NTE2012 Integrated Circuit 7-Channel Darlington Array/Driver
NTE2013 Integrated Circuit 7-Channel Darlington Array/Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE-X 制造商:MICRODC 制造商全稱:MICRODC 功能描述:1W, FIXEDINPUT, ISOLATED SINGLEOUTPUTSMD DC-DCCONVERTER
NTF2955 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET
NTF2955PT1G 功能描述:MOSFET PFET 60V 2.6A 0.14 SOT223 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF2955T1 功能描述:MOSFET -60V 2.6A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTF2955T1G 功能描述:MOSFET -60V 2.6A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube