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參數(shù)資料
| 型號： | NTE998 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit 1.22V Reference Diode |
| 中文描述： | 集成電路1.22V的參考二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE998 |
NTE998
Integrated Circuit
1.22V Reference Diode
Description:
The NTE998 is a temperature compensated low voltage reference device in a TO92 type package.
A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this
construction is low noise, low current, and good long term stability associated with modern integrated
circuits.
These characteristics make this device ideal for applications in battery operated equipment or where
low power is necessary.
Features:
Low Breakdown Voltage: 1.220V typ
Low Bias Current: 50
μ
A
Temperature Stability: .005 to .01%/
°
C
Absolute Maximum Ratings:
Power Dissipation (free air)
Linear Derating Factor
Forward Current
Reverse Current
Storage Temperature
Operating Range
Lead Temperature (Soldering, 10 sec.)
600mW
5mW/
°
C
5mA
5mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +150
°
C
0
°
to +70
°
C
+260
°
C
Electrical Characteristics:
Parameter
Test Conditions
I
R
= 500
μ
A
50
μ
A
≤
I
R
≤
5mA
I
R
= 50
μ
A
I
R
= 500
μ
A
I
F
= 500
μ
A
I
F
= 500
μ
A
50
μ
A
≤
I
R
≤
5mA
Min
1.20
–
–
–
–
–
–
0.05
Typ
1.22
15
1
1
0.7
0.7
0.003
–
Max
1.25
20
2
2
1.0
1.0
0.01
5.0
Unit
V
mV
V
V
%/
°
C
mA
Reverse Breakdown Voltage
Reverse Breakdown Voltage Change
Reverse Dynamic Impedance
Forward Voltage Drop
RMS Noise Voltage
Breakdown Voltage Temperatue Coefficient
Reverse Current
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參數(shù)描述 |
|---|---|
| NTE999 | 制造商:NTE Electronics 功能描述:IC-ADJ PRECISION VLTG REG 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:IC ADJ SHUNT REG 2.495V 8mV TO-92 制造商:NTE Electronics 功能描述:IC, ADJ SHUNT REG, 2.495V, 8mV, TO-92 制造商:NTE Electronics 功能描述:TO-92 ADJ SHUNT REG 制造商:NTE Electronics 功能描述:IC, ADJ SHUNT REG, 2.495V, 8mV, TO-92; Topology:Shunt, Programmable; Input Voltage Min:2.495V; Input Voltage Max:36V; Reference Voltage:2.495V; Reference Voltage Tolerance:8mV; Voltage Reference Case Style:TO-92; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:V-Ref Adjustable 2.495V to 36V 100mA 3-Pin TO-92 |
| NTE999M | 制造商:NTE Electronics 功能描述:IC-PROG 36V REFERENCE 制造商:NTE Electronics 功能描述:V-Ref Adjustable 2.495V to 36V 100mA 8-Pin |
| NTE999SM | 制造商:NTE Electronics 功能描述:IC-PROG 36V REFERENCE 制造商:NTE Electronics 功能描述:SO-8 36V PROG REF 制造商:NTE Electronics 功能描述:IC, VOLT REF; Topology:Shunt, Programmable; Input Voltage Min:2.495V; Input Voltage Max:36V; Reference Voltage:2.495V; Reference Voltage Tolerance:3mV; Voltage Reference Case Style:SOIC; No. of Pins:8; Input Voltage:2.495V to 36V ;RoHS Compliant: Yes |
| NTE-DRAM | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:MICROPROCESSOR & MEMORY CIRCUITS |
| NTE-DTC100 | 制造商:NTE Electronics 功能描述: |
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