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參數(shù)資料
| 型號(hào)： | NTE929 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit General Purpose, High Current, NPN Transistor Array |
| 中文描述： | 通用集成電路，高電流，NPN晶體管陣列 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 23K |
| 代理商： | NTE929 |
NTE929
Integrated Circuit
General Purpose, High Current, NPN Transistor Array
Description:
The NTE929 is a versatile array of five high–current (to 100mA) NPN transistors on a common mono-
lithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e.
1mA) for applications in which offset parameters are of special importance.
Independent connections for each transistors plus a separate terminal for the substrate permit maxi-
mum flexibility in circuit design.
Features:
High I
C
100mA max
Low V
CEsat
(at 50mA) 0.7V max.
Matched pair (Q1 and Q2)
V
10
(V
BE
matched):
±
5mV max.
I
10
(at 1mA): 2.5
μ
A max.
5 independent transistors plus separate substrate connection.
Applications:
Signal processing and switching systems operating from DC to VHF
Lamp and relay driver
Differential amplifier
Temperature–compensated amplifier
Thyristor firing
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Power Dissipation, P
D
Any One Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Package
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 55
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
opr
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±
1/32” from case, 10sec max), T
L
The following ratings apply for each transistor in the device:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Substrate Voltage, V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The collector of each transistor of the NTE929 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)
should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can
be used to establish a signal ground.
500mW
750mW
Derate Linearly 6.67mW/
°
C
–55 to +125
°
C
–65 to +150
°
C
. . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+265
°
C
15V
20V
20V
5V
20mA
20mA
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