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參數(shù)資料
| 型號(hào)： | NTE870 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit Dual Operational Transconductance Amp |
| 中文描述： | 集成電路雙路運(yùn)算跨導(dǎo)放大器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 25K |
| 代理商： | NTE870 |
NTE870
Integrated Circuit
Dual Operational Transconductance Amp
Description:
The NTE870 consists of two current controlled transconductance amplifiers each with differential in-
puts and a push–pull output. The two amplifiers share common supplies but otherwise operate inde-
pendently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input
levels resulting in a 10dB signal–to–noise improvement referenced to 0.5 percent THD. Controlled
impedance buffers are provided which are especially designed to complement the dynamic range of
the amplifiers.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Supply Voltage, V+/V–
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage, V
ID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode Bias Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Amp Bias Current, I
ABC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Buffer Output Current, I
o
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Input Voltage, V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V or
±
18V
±
5V
2mA
2mA
20mA
570mW
V+ to V–
–20
°
to +75
°
C
–40
°
to +125
°
C
Electrical Characteristics:
(T
A
= +25
°
C, V+/V– =
±
15V, I
ABC
= 500
μ
A unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage (V
OS
)
V
IO
–
0.4
5.0
mV
Input Offset Voltage
I
ABC
= 5
μ
A
Diode Base Current, I
D
= 500
μ
A
5
μ
A
≤
I
ABC
≤
500
μ
A
–
0.3
5.0
mV
V
OS
Including Diodes
–
0.5
5.0
mV
Input Offset Change
–
0.1
–
mV
Input Bias Current
I
B
–
0.4
5.0
μ
A
T
A
= –20
°
to +75
°
C
–
1.0
8.0
μ
A
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