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參數(shù)資料
| 型號(hào)： | NTE77 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Broadband CATV Driver |
| 中文描述： | 硅NPN晶體管驅(qū)動(dòng)寬帶有線電視 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | NTE77 |
NTE77
Silicon NPN Transistor
Broadband CATV Driver
Description:
The NTE77 is an NPN transistor in a TO39 type case designed to be utilized in broadband and linear
amplifier circuitry requiring low noise and low intermodulation distortion. This device is suitable for
use in CATV driver stages in trunk line, bridger, and line extender amplifiers.
Features:
High Gain–Bandwidth Product: f
T
= 1.5GHz Typ
Low Intermodulation, Low Cross–Modulation Distortion: X–MOD = –57dB
Low Noise Figure: NF = 2.7dB Typ
Low Output Capacitance: C
ob
= 3.5pF Max @ V
CB
= 30V
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V
30V
5V
400mA
3.5W
+200
°
C
–65
°
to +200
°
C
+50
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 5mA, I
B
= 0, Note 1
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0, Note 1
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CEO
V
CE
=, 28V, I
B
= 0
30
50
5
–
–
–
–
–
–
–
–
V
V
V
0.1
mA
Note 1. Pulsed through 25mH Inductor.
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