參數(shù)資料
型號： NTE69
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor UHF/VHF Amplifier
中文描述： 硅NPN晶體管超高頻/甚高頻放大器
文件頁數(shù)： 1/2頁
文件大?。?/td> 20K
代理商： NTE69
NTE69
Silicon NPN Transistor
UHF/VHF Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate above 25
°
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Tange, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
Note 1 R
thJA
is measured with the device soldered into a typical printed circuit board.
25V
35V
3V
50mA
350mW
2.8mW/
°
C
1.0W
8.0mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
125
°
C/W
357
°
C/W
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
= 1mA, I
B
= 0, Note 2
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
25
–
–
V
Colletor–Base Breakdown Voltage
35
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
ON Characteristics
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 4mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
25
60
–
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
–
200
350
mV
Base–Emitter Saturation Voltage
–
750
950
mV
Small–Signal Characteristics
Current Gain–Bandwidth Product
f
T
V
CE
= 12V, I
C
= 4mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 12V, I
E
= 4mA, f = 31.8MHz
750
1100
–
MHz
Output Capaciatnce
C
obo
rbC
c
–
0.8
1.0
pF
Collector–Base Time Constant
–
–
9.5
ps
Note 2 Pulse test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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