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參數(shù)資料
| 型號(hào)： | NTE6419 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Bidirectional Thyristor Diodes (SIDAC) |
| 中文描述： | 雙向可控硅二極管（SIDAC的） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | NTE6419 |
NTE6415 thru NTE6419
Bidirectional Thyristor Diodes (SIDAC)
Description:
The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with
greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding
the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to
a low on–state voltage. Conduction will continue until the current is interrupted or drops below the
minimum holding current of the device.
Features:
Especially Effective in AC Circuits
Switching Function Directly with the AC Power Line
Applicable for Various Pulse Generators
Applications:
High Voltage Lamp Ignitors
Natural Gas Ignitors
Gas Oil Ignitors
High Voltage Power Supplies
Xenon Ignitors
Overvoltage Protection
Pulse generators
Fluorescent Lighting Ignitors
Absolute Maximum Ratings:
Peak Off Voltage, V
DRM
NTE6415, NTE6416
NTE6417, NTE6418, NTE6419
Effective Current (T
A
= +40
°
C, 50Hz, Sine Wave, Conducting Angle = 180
°
), I
T
Surge Current (50Hz, Non–Repeated 1 Cycle Sine wave, Peak Value), I
TSM
Peak Current (T
A
= +40
°
C, Pulse Width = 10
μ
s, f = 1kHz), I
TRM
Current Rise Rate, di/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Lead Temperature (During Soldering, 5mm from case, 5sec max), T
L
45V
90V
1A
13A
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
50A/
μ
s
+125
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–30
°
to +125
°
C
15
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+250
°
C
. . . . . . . . . . . . . . . . . .
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| NTE65 | 制造商:NTE Electronics 功能描述:BIPO HI-V LOW NOISE 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 15V 0.03A 3-Pin |
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| NTE6507 | 制造商:NTE Electronics 功能描述:IC, 8BIT MPU, 1MHZ, DIP-28; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:28; Operating Temperature Min:0C; Operating Temperature Max:70C; Clock Frequency:1MHz; Mounting Type:Through Hole ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:MPU CISC 8-Bit NMOS 1MHz 28-Pin PDIP |
| NTE6508 | 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 300NS, 16-DIP; Memory Size:1KB; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:DIP; No. of Pins:16; Access Time:300ns; Operating Temperature Min:-40C; Operating Temperature Max:85C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 1K x 1 300ns 16-Pin PDIP |
| NTE65101 | 制造商:NTE Electronics 功能描述:IC - NMOS 1K SRAM 450NS 22 LEAD DIP 制造商:NTE Electronics 功能描述:IC-CMOS 1K SRAM 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 450NS, 22-DIP; Memory Size:1Kbit; Memory Configuration:256 x 4; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:22; Access Time:450ns; Operating Temperature Min:-40C 制造商:NTE Electronics 功能描述:SRAM Chip Async Single 5V 1K-Bit 256 x 4-Bit 450ns 22-Pin PDIP |
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