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| 型號： | NTE6111 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Power Rectifier Diode, 1100 Amp |
| 中文描述： | 硅功率整流二極管，1100安培 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE6111 |
Electrical Specifications (Cont’d):
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum RMS Forward Current
I
F(RMS)
@ +25
°
C heatsink temperature double side cooled
2500
A
Maximum Peak One
–
Cycle Forward
Non
–
Repetitive Surge Current
I
FSM
t = 10ms
Sinusoidal Halfwave, 100% V
RRM
Reapplied, Initial T
J
= +180
°
C
10930
A
t = 8.3ms
11450
A
t = 10ms
Sinusoidal Halfwave, No Voltage
Reapplied, Initial T
J
= +180
C
°
13000
A
t = 8.3ms
13600
A
Maximum I
2
t for Fusing
I
2
t
t = 10ms
Sinusoidal Halfwave, 100% V
RRM
Reapplied, Initial T
J
= +180
C
°
598
A
2
s
t = 8.3ms
546
A
2
s
t = 10ms
Sinusoidal Halfwave, No Voltage
Reapplied, Initial T
J
= +180
C
°
846
A
2
s
t = 8.3ms
772
A
2
s
Maximum I
2
t for Fusing
I
2
t
t = 0.1 to 10ms, no voltage reapplied
8460
A
2
t
Threshold Voltage, Low Level
V
F(TO)1
T
J
= +180
°
C, (16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
)
T
J
= +180
°
C, (I >
π
x I
F(AV)
)
T
J
= +180
°
C, (16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
)
T
J
= +180
°
C, (I >
π
x I
F(AV)
)
T
J
= +180
°
C, I
pk
= 1500A, t
p
= 10ms
0.78
V
Threshold Voltage, High Level
V
F(TO)2
0.94
V
Forward Slope Resistance, Low Level
r
f1
0.35
m
Forward Slope Resistance, High Level
r
f2
0.26
m
Maximum Forward Voltage Drop
V
FM
1.31
V
1.650 (42.0)
Dia Max
1.000 (25.3)
Dia Max
(Two Places)
1.590 (40.5)
Dia Max
.610
(15.4)
Max
.030 (0.8)
(Both Ends)
.140 (3.5) Dia. x
.070 (1.8) Deep
(Both Sides)
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