參數(shù)資料
型號(hào)： NTE60
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications
中文描述： 硅晶體管互補(bǔ)高功率音頻，磁頭定位的線性應(yīng)用
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 24K
代理商： NTE60
NTE60 (NPN) & NTE61 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
High Safe Operating Area: 250W @ 50V
For Low Distortion Complementary Designs
High DC Current Gain: h
FE
= 25 Min @ I
C
= 5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO(sus)
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Continuous Base Current, I
B
Continuous Emitter Current, I
E
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), T
L
Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
140V
140V
5V
20A
5A
25A
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.43W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
0.70
°
C/W
+265
°
C
. . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 2
I
CEX
V
CE
= 140V, V
BE(off)
= 1.5V
V
CE
= 140V, V
BE(off)
= 1.5V, T
C
= +150
°
C
I
CEO
V
CE
= 140V, I
B
= 0
I
EBO
V
EB
= 5V, I
C
= 0
140
–
–
V
μ
A
mA
μ
A
μ
A
Collector Cutoff Current
–
–
100
–
–
2
–
–
250
Emitter Cutoff Current
–
–
100
Note 2. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
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