參數(shù)資料
型號: NTE6087
廠商: NTE Electronics, Inc.
英文描述: Schottky Barrier Silicon Rectifier
中文描述: 肖特基硅整流
文件頁數(shù): 1/2頁
文件大?。?/td> 18K
代理商: NTE6087
NTE6087
Schottky Barrier Silicon Rectifier
Features:
Guarding for Stress Protection
Low Forward Voltage
+150
°
C Operating Junction Temperature
Guaranteed Reverse Avalanche
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
Working Peak Reverse Voltage, V
RWM
DC Blocking Voltage, V
R
Average Rectified Forward Current (V
R
= 45V, T
C
= +130
°
C), I
F(AV)
Peak Repetitive Forward Current, I
FRM
(Per Diode Leg, V
R
= 45V, Square Wave, 20kHz, T
C
= +130
°
C)
Non–Repetitive Peak Surge Current, I
FSM
(Per Diode Leg, Surge applied at rated load conditions halfwave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current (2
μ
s, 1kHz), I
RRM
Voltage Rate of Change (V
R
= 45V), dv/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case (Per Diode Leg), R
thJC
45V
45V
45V
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
30A
. . . . . . . . . . . . . . . . . . . .
150A
1A
. . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1000V/
μ
s
–65
°
to +150
°
C
–65
°
to +175
°
C
1.5
°
C/W
. . . . . . . . . . . . .
Electrical Characteristics:
(Per Diode Leg)
Parameter
Instantaneous Forward Voltage
Symbol
v
F
Test Conditions
i
F
= 30A, T
C
= +125
°
C, Note 1
i
F
= 30A, T
C
= +25
°
C, Note 1
V
R
= 45V, T
C
= +125
°
C, Note 1
V
R
= 45V, T
C
= +25
°
C, Note 1
Min
Typ
Max
0.73
0.82
40
0.2
Unit
V
V
mA
mA
Instantaneous Reverse Current
i
R
Note 1. Pulse test: Pulse Width = 300
μ
s, Duty Cycle
2%.
相關PDF資料
PDF描述
NTE6090 CONNECTOR ACCESSORY
NTE6091 Silicon Schottky Barrier Rectifier
NTE6092 Silicon Schottky Barrier Rectifier
NTE6093 Silicon Rectifier Dual, Schottky Barrier
NTE6094 Silicon Rectifier Schottky Barrier
相關代理商/技術參數(shù)
參數(shù)描述
NTE6088 制造商:NTE Electronics 功能描述:RECTIFIER DUAL SCHOTTKY 60V 30A TO-220 COMMON CATHODE 制造商:NTE Electronics 功能描述:R-SCHOTTKY 30A- 60V DUAL 制造商:NTE Electronics 功能描述:Diode Schottky 60V 30A 3-Pin(3+Tab) TO-220
NTE6090 制造商:NTE Electronics 功能描述:RECTIFIER DUAL SCHOTTKY 45V 30A TO-3P COMMON CATHODE 制造商:NTE Electronics 功能描述:STANDARD DIODE 30A 45V TO-218 制造商:NTE Electronics 功能描述:STANDARD DIODE, 30A, 45V, TO-218 制造商:NTE Electronics 功能描述:R-DUAL SCHOTTKY 45V-30A 制造商:NTE Electronics 功能描述:STANDARD DIODE, 30A, 45V, TO-218; Diode Type:Standard Recovery; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):30A; Forward Voltage VF Max:760mV; Diode Case Style:TO-218 制造商:NTE Electronics 功能描述:Diode Schottky 45V 30A 3-Pin(3+Tab) TO-218
NTE6091 制造商:NTE Electronics 功能描述:R-SCHOTTKY40A45V DUAL 制造商:NTE Electronics 功能描述:R-SCHOTTY 40A 45V 制造商:NTE Electronics 功能描述:Diode Schottky 45V 40A 3-Pin(3+Tab) TO-247
NTE6092 制造商:NTE Electronics 功能描述:HOTTKY40A60V DUAL 制造商:NTE Electronics 功能描述:TO 247 SCHOTTKY BARR 制造商:NTE Electronics 功能描述:Diode Schottky 60V 40A 3-Pin(3+Tab) TO-247
NTE6093 制造商:NTE Electronics 功能描述:RECTIFIER DUAL SCHOTKY 60V 60A TO-3P COMMON CATHODE 制造商:NTE Electronics 功能描述:60A 60V SCHOTTKY