參數(shù)資料
型號(hào)： NTE5499
廠商： NTE Electronics, Inc.
英文描述： Silicon Controlled Rectifier (SCR) 12 Amp
中文描述： 可控硅（晶閘管）12安培
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 22K
代理商： NTE5499
NTE5498 & NTE5499
Silicon Controlled Rectifier (SCR)
12 Amp
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Peak Repetitive Off–State Voltage (T
J
= –40
°
to +125
°
C, R
GK
= 1k
), V
DRM
, V
RRM
NTE5498
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5499
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (All Conduction Angles, T
C
= +85
°
C), I
T(RMS)
Average On–State Current (Half Cycle, 180
°
Conduction Angle, T
C
= +85
°
C), I
T(AV)
Non–Repetitive On–State Current (Half Cycle, 60Hz), I
TSM
Non–Repetitive On–State Current (Half Cycle, 50Hz), I
TSM
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
2
t
Peak Gate Current (10
μ
s Max), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Dissipation (10
μ
s Max), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Dissipation (20ms Max), P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
L
400V
800V
12A
7.6A
132A
120A
72A
2
s
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A
10W
1W
–40
°
to +125
°
C
–40
°
to +125
°
C
3K/W
60K/W
+250
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Off–State Leakage Current
I
DRM
,
I
RRM
Test Conditions
Min Typ Max
–
–
–
–
–
–
–
–
–
–
Unit
mA
μ
A
V
V
m
V
DRM
+ V
RRM
, R
GK
= 1k
T
J
= +125
°
C
T
J
= +25
°
C
1.5
5.0
1.8
1.0
36
On–State Voltage
On–State Threshold Voltage
V
T
I
T
= 24A, T
J
= +25
°
C
T
J
= +125
°
C
T
J
= +125
°
C
V
D
= 7V
V
D
= 7V
V
T(TO)
r
T
I
GT
V
GT
On–State Slope Resistance
Gate–Trigger Current
Gate–Trigger Voltage
5
–
–
–
10
2.0
mA
V
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