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參數(shù)資料
| 型號(hào)： | NTE5486 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) 8 Amp |
| 中文描述： | 可控硅（晶閘管）8放大器 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | NTE5486 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
Peak Forward or Reverse
Blocking Current
I
DRM
,
I
RRM
Rated V
DRM
or V
RRM
, T
J
= +25
°
C
Gate Open
–
–
10
T
J
= +100
°
C
–
–
2
Gate Trigger Current (Continuous DC)
I
GT
V
D
= 7V, R
L
= 100
,
Note 3
–
10
30
mA
T
C
=
–
40
°
C
–
–
60
mA
Gate Trigger Voltage (Continuous DC)
V
GT
V
D
= 7V, R
L
= 100
–
0.75
1.5
V
T
C
=
–
40
°
C
T
J
= +100
°
C
–
–
2.5
V
0.2
–
–
V
Forward
“
ON
”
Voltage
v
TM
I
H
I
TM
= 15.7A, Note 4
V
D
= 7V, Gate Open
–
1.4
2.0
V
Holding Current
–
10
30
mA
T
C
=
–
40
°
C
–
–
60
mA
μ
s
μ
s
μ
s
Turn
–
On Time (t
d
+ t
r
)
Turn
–
Off Time
t
on
t
off
I
G
= 20mA, I
F
= 5A, V
D
= Rated V
DRM
I
F
= 5A, I
R
= 5A,
dv/dt = 30V/
μ
s
–
1
–
–
15
–
T
J
= +100
°
C,
V
D
= Rated V
DRM
–
25
–
Forward Voltage Application Rate
(Exponential)
dv/dt
Gate Open, T
J
= +100
°
C,
V
D
= Rated V
DRM
–
50
–
V/
μ
s
Note 3. For optimum operation, i.e. faster turn
–
on, lower switching losses, best di/dt capability, rec-
ommended I
GT
= 200mA minimum.
Note 4. Pulsed, 1ms max., Duty Cycle
≤
1%.
.125 (3.17) Max
.431
(10.98
Max
.855
(21.7)
Max
.453
(111.5)
Max
10
–
32 UNF
–
2A
Anode
Cathode
Gate
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