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參數(shù)資料
| 型號(hào)： | NTE5460 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) |
| 中文描述： | 可控硅（晶閘管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE5460 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
Peak Forward Blocking Current
I
DRM
V
DRM
= 800V, T
J
= +25
°
C
V
DRM
= 800V, T
J
= +125
°
C
V
RRM
= 800V, T
J
= +125
°
C
I
TM
= 50A, Note 3
Anode Voltage = 12V, R
L
= 100
Anode Voltage = 12V, R
L
= 100
Anode Voltage = 800V, R
L
= 100
,
T
J
= +125
°
C
Anode Voltage = 12V
–
–
10
–
–
2
Peak Reverse Blocking Current
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
t
q
–
–
2
mA
Forward
“
ON
”
Voltage
–
–
1.8
V
DC Gate Trigger Current
–
–
40
mA
DC Gate Trigger Voltage
–
0.8
1.5
V
Gate Non
–
Trigger Voltage
0.2
–
–
V
Holding Current
–
20
40
mA
μ
s
μ
s
μ
s
V/
μ
s
Turn
–
On Time
I
TM
= 25A, I
GT
= 40mA
V
DRM
= 800V, I
TM
= 25A, I
R
= 25A
V
DRM
= 800V, I
TM
= 25A, I
R
= 25A, T
J
= +125
°
C
Gate Open, V
DRM
= 800V, Exponential Waveform
–
1.5
–
Turn
–
Off Time
–
15
–
–
35
–
Critical Rate of Rise of
Off
–
State Voltage
dv/dt
–
100
–
Note 3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.114 (2.9) Max
.173 (4.4) Max
K
A
G
.122 (3.1)
Dia
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| NTE5461 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 50VRM 10A TO-220 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER5 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER,50V V(DRM), 制造商:NTE Electronics 功能描述:SCR-50VRM 10A 制造商:NTE Electronics 功能描述:SCR 50V 10A TO220 制造商:NTE Electronics 功能描述:THYRISTOR, SCR, 50V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:50V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Holding Current Max Ih:20mA; Gate Trigger Voltage Max Vgt:1.5V; Thyristor Case:TO-220 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 50V 100A 3-Pin(3+Tab) TO-220 |
| NTE5462 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 100VRM 10A TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 100V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 100V 100A 3-Pin(3+Tab) TO-220 |
| NTE5463 | 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 200V TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 200V, TO-220 制造商:NTE Electronics 功能描述:SCR-200VRM 10A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 200V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:200V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220 |
| NTE5465 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 400VRM 10A TO-220 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 400V TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 400V, TO-220 制造商:NTE Electronics 功能描述:SCR-400VRM 10A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 400V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 400V 100A 3-Pin(3+Tab) TO-220 |
| NTE5466 | 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 600V TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 600V, TO-220 制造商:NTE Electronics 功能描述:SCR-600VRM 10A 制造商:NTE Electronics 功能描述:SCR 600VRM 10A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 600V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 600V 100A 3-Pin(3+Tab) TO-220 |
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