參數(shù)資料
型號： NTE49
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver
中文描述： 硅晶體管通用互補，高電壓放大器，驅(qū)動器
文件頁數(shù)： 2/2頁
文件大?。?/td> 27K
代理商： NTE49
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector
–
Emitter Breakdown Voltage
Emitter
–
Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
(Note 2)
DC Current Gain
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
I
CBO
V
CB
= 40V, I
E
= 0
100
4
–
–
–
–
–
–
V
V
nA
100
h
FE
I
C
= 50mA, V
CE
= 1V
I
C
= 250mA, V
CE
= 1V
I
C
= 500mA, V
CE
= 1V
I
C
= 250mA, I
B
= 10mA
I
C
= 250mA, I
B
= 25mA
I
C
= 250mA, V
CE
= 5V
80
60
–
–
–
–
125
100
55
0.18
0.1
0.74
–
–
–
Collector
–
Emitter Saturation Voltage
V
CE(sat)
0.4
–
1.2
V
V
V
Base
–
Emitter ON Voltage
Small–Signal Characteristics
Current Gain
–
Bandwidth Product
V
BE(on)
f
T
I
C
= 250mA, V
CE
= 5V,
f = 100MHz, Note 1
V
CB
= 10V, I
E
= 0, f = 100kHz
50
150
–
MHz
Output Capacitance
C
ob
–
6
12
pF
Note 2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
.070 (1.78) x 45
°
Chamf
.132 (3.35) Dia
.050 (1.27)
.325
(9.52)
.180 (4.57)
.380 (9.56)
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.400
(10.16)
Min
.100 (2.54)
.100 (2.54)
C
E
B
C
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