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參數(shù)資料
| 型號： | NTE385 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Audio Power Amp, Switch |
| 中文描述： | 硅NPN晶體管音頻功率放大器，開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | NTE385 |
NTE385
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
switch mode applications.
Features:
Fast Turn–Off Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO(sus)
Collector–Emitter Voltage (V
BE
= –1.5V), V
CEX
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +100
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
L
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
≤
10%.
400V
850V
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A
30A
60A
5A
20A
175W
1.0W/
°
C
100W
–65
°
to +200
°
C
–65
°
to +200
°
C
1.0
°
C/W
+275
°
C
. . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
(Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
CEX
I
C
= 200mA, I
B
= 0, L = 25mH
V
CEX
= 850V, V
BE(off)
= 1.5V
V
CEV
= 850V, V
BE(off)
= 1.5V, T
C
= +125
°
C
V
CE
= 850V, R
BE
= 10
V
CE
= 850V, R
BE
= 10
, T
C
= +100
°
C
V
BE
= 5V, I
C
= 0
I
E
= 50mA, –I
C
= 0
400
–
–
–
–
–
7
–
–
–
–
–
–
–
–
V
0.2
2.0
0.5
3.0
0.1
–
mA
mA
mA
mA
mA
V
I
CER
Emitter Cutoff Current
Emitter–Base Breakdown Voltage
I
EBO
V
(BR)EBO
Note 2. Pulse test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%, V
cl
= 300V, V
BE(off)
= 5V, L
C
= 180
μ
H.
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| NTE387MP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 150V V(BR)CEO | 50A I(C) | TO-3 |
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