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參數(shù)資料
| 型號： | NTE3102 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Photon Coupled Interrupter Module NPN Transistor |
| 中文描述： | 光子耦合遮斷NPN晶體管模塊 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE3102 |
NTE3102
Photon Coupled Interrupter Module
NPN Transistor
Description:
The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical
resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing pro-
vides a means of interrupting the signal with an opaque material, switching the output from an “ON”
into an “OFF” state.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Total Device
Operating Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 5sec Max), T
L
Infrared Emitting Diode
Forward Current, I
F
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width
≤
1
μ
s, PRR
≤
300pps)
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +100
°
C
–55
°
to +100
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60mA
3A
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mW
1.33mW/
°
C
150mW
2.0mW/
°
C
100mA
55V
6V
Electrical Characteristics:
(T
A
= +25
°
C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter
Reverse Breakdown Voltage
V
(BR)R
V
F
I
R
C
i
I
R
= 10
μ
A
I
F
= 60mA
V
R
= 5V
V = 0, f = 1MHz
6
–
–
V
Forward Voltage
–
–
1.7
V
Reverse Current
–
–
100
nA
Capacitance
–
30
–
pF
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
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