參數(shù)資料
型號(hào): NTE2635
廠商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode
中文描述: 硅NPN晶體管水平偏轉(zhuǎn)w /內(nèi)置阻尼二極管
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 24K
代理商: NTE2635
NTE2635
Silicon NPN Transistor
Horizontal Deflection
w
/Internal Damper Diode
Description:
The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching
NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal
deflection circuits in color TV receivers. This device features exceptional tolerance to base drive and
collector current load variations resulting in a very low worst case dissipation.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
BE
= 0V), V
CESM
Collector–Emitter Voltage, V
CEO
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Base Current, –I
B
Continuous (Average over any 20ms period)
Peak (Turn–Off Current)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case (With Heat Sink Compound), R
thJC
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
1500V
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8A
15A
4A
6A
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A
35W
+150
°
C
–65
°
to +150
°
C
. . . . . . . . . . . . .
3.6K/W
55K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Isolation Limiting Value
RMS Isolation Voltage from all
Three Terminals to Case
V
ISOL
f = 50–60hz, Sinusoidal Waveform,
R.H.
65%, Clean and Dustfree
2500
V
Capacitance from T2 to External
Heat Sink
C
ISOL
f = 1MHz
10
pF
Static Characteristics
Collector Cutoff Current
I
CES
V
CE
= 1500V, V
BE
= 0, Note 1
V
CE
= 1500V, V
BE
= 0, T
J
= +125
°
C,
Note 1
1.0
mA
2.0
mA
Note 1. Measured with half sine–wave voltage (curve tracer).
相關(guān)PDF資料
PDF描述
NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode
NTE2637 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, Fast Switching
NTE263 Silicon Complementary Transistors Darlington Power Amplifier
NTE2638 Silicon NPN Transistor Darlington
NTE2639 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE2636 制造商:NTE Electronics 功能描述:T-NPN- SI TV HORIZONTAL OUTPUT 制造商:NTE Electronics 功能描述:NPN SI HORIZ OUTPUT 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 1.5KV 8A 3-Pin(3+Tab) TO-3PFM
NTE2637 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 1700V IC=8A TO-218 CASE HORIZONTAL DEFLECTION OUTPUTR 制造商:NTE Electronics 功能描述:T-NPN HORIZ OUTPUT 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 700V 8A 3-Pin(3+Tab)
NTE2638 制造商:NTE Electronics 功能描述:Trans Darlington NPN 400V 7A 3-Pin(3+Tab) TO-220
NTE2639 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 1700V IC=12A SOT-399 CASE FOR HORIZONTAL DEFLECTION OUTPU 制造商:NTE Electronics 功能描述:T-NPN SI CRT 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 825V 30A 3-Pin(3+Tab)
NTE264 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON DARLINGTON 80V IC=10A TO-220 CASE COMP'L TO NTE263 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR PNP -100V TO-220 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR, PNP, -100V TO-220 制造商:NTE Electronics 功能描述:T-PNP- DARL 80 V-HFE=1000 制造商:NTE Electronics 功能描述:DARLINGTON TRANSISTOR, PNP, -100V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:10A; DC Current Gain hFE:20000; Operating Temperature Min:-65C; No. of Pins:3;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-220