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參數(shù)資料
| 型號： | NTE2023 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit General Purpose, High Current 7-Segment Display Driver |
| 中文描述： | 通用集成電路，高電流7段顯示驅(qū)動程序 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE2023 |
NTE2023
Integrated Circuit
General Purpose, High Current
7–Segment Display Driver
Description:
The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package com-
prised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
in a common–collector configuration.
Absolute Maximum Ratings:
Power Dissipation (Any One Transistor), P
D
Operating Ambient Temperature Range, T
opr
Individual Transistor Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Collector–Substrate Voltage, V
CIO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage so as to maintain isolation between transistors, and to provide normal transistor
action. Undesired coupling between transistors is avoided by maintaining the substrate (5)
at either DC or signal (AC) ground. An appropriate bypass capacitor can be used to establish
a signal ground.
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40
°
to +85
°
C
16V
20V
20V
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA
20mA
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Collector–Substrate Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Symbol
V
(BR)CES
I
C
= 500
μ
A
V
(BR)CIE
I
CI
= 500
μ
A
V
(BR)CEO
I
C
= 1mA
V
(BR)EBO
I
C
= 500
μ
A
h
FE
V
CE
= 0.5V, I
C
= 30mA
V
CE
= 0.8V, I
C
= 50mA
Test Conditions
Min
20
20
16
5
30
40
Typ
80
80
40
7
80
85
Max
–
–
–
–
–
–
Unit
V
V
V
V
Forward Current Transfer Ratio
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