參數(shù)資料
型號(hào)： NTE191
廠商： NTE Electronics, Inc.
元件分類： 視頻放大器
英文描述： Silicon Complementary Transistors High Voltage Video Amplifier
中文描述： 硅晶體管互補(bǔ)高壓視頻放大器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 23K
代理商： NTE191
NTE191 (NPN) & NTE240 (PNP)
Silicon Complementary Transistors
High Voltage Video Amplifier
Description:
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type
package designed for high–voltage video and luminance output stages in TV receivers.
Features:
High Collector–Emitter Breakdown Voltage: V
(BR)CEO
= 300V (Min) @ I
C
= 1mA
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 0.75V (Max) @ I
C
= 30mA
Low Collector–Base Capacitance: C
cb
= 3pF (Max) @ V
CB
= 20V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EBO
NTE191
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE240
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 2), R
thJA
Note 1. NTE191 is a
discontinued
device and
no longer available
.
Note 2. R
thJA
is measured with the device soldered into a typical printed circuit board.
300V
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V
5V
500mA
1W
8mW/
°
C
10W
80mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
12.5
°
C/W
125
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 3
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
300
–
–
V
Collector–Base Breakdown Voltage
300
–
–
V
Emitter–Base Breakdown Voltage
NTE191
6
5
–
–
–
–
V
V
NTE240
Note 3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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