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參數(shù)資料
| 型號： | NTE188 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quadruple Operational Amplifier 14-SSOP 0 to 70 |
| 中文描述： | 硅晶體管互補高壓放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE188 |
NTE188 (NPN) & NTE189 (PNP)
Silicon Complementary Transistors
High Voltage Amplifier & Driver
Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type
package designed for general purpose, high voltage amplifier and driver applications.
Features:
High Collector–Emitter Breakdown Voltage: V
(BR)CEO
= 80V @ I
C
= 1mA
High Power Dissipation: P
D
= 10W @ T
C
= +25
°
C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voiltage, V
CB
Emitter–Base Voltage, V
EB
Continuous Collector Current, I
C
Total Power Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
Note 1. R
thJA
is measured with the device soldered into a typical printed circuit board.
80V
80V
4V
2A
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8mW/
°
C
10W
80mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
125
°
C/W
12.5
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
= 1mA, I
B
= 0, Note 2
I
E
= 100
μ
A, I
C
= 0
80
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
NTE188
V
CB
= 80V, I
E
= 0
V
CB
= 60V, I
E
= 0
–
–
100
nA
NTE189
–
–
100
nA
Note 2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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