參數(shù)資料
型號： NTE184
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors Audio Power Amp, Switch
中文描述： 硅互補晶體管音頻功率放大器，開關(guān)
文件頁數(shù)： 1/2頁
文件大小： 22K
代理商： NTE184
NTE184 (NPN) & NTE185 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic
package designed for use in power amplifier and switching circuits.
Features:
Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Collector Current, I
C
Base Current, I
B
Total Power Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
80V
80V
5V
4A
1A
40W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
320mW/
°
C
–65
°
to +150
°
C
–65
°
to +150
°
C
3.12
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 0.1A, I
B
= 0, Note 1
I
CEO
V
CE
= 80V, I
B
= 0
I
CEX
V
CE
= 80V, V
EB(off)
= 1.5V
V
CE
= 80V, V
EB(off)
= 1.5V, T
C
= +150
°
C
I
CBO
V
CB
= 80V, I
E
= 0
I
EBO
V
BE
= 5V, I
C
= 0
80
–
–
V
Collector Cutoff Current
–
–
1.0
mA
–
–
0.1
mA
–
–
2.0
mA
–
–
0.1
mA
Emitter Cutoff Current
–
–
1.0
mA
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