參數(shù)資料
型號(hào)： NTE1840
廠商： NTE Electronics, Inc.
元件分類(lèi)： 基準(zhǔn)電壓源/電流源
英文描述： Integrated Circuit Hybrid Switching Voltage Regulator
中文描述： 混合集成電路開(kāi)關(guān)穩(wěn)壓器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 24K
代理商： NTE1840
NTE1840 & NTE1841
Integrated Circuit
Hybrid Switching Voltage Regulator
Features:
Triple Diffused Transistor Chips Incorporated
Compact Plastic Package with Industry Standard Reliability
Output Voltage is Pre–Fixed – No External Adjustment is Required
Absolute Maximum Ratings:
Peak Input Voltage, V
IN
Input Current, I
IN
Continuous
Pulse
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +100
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Transistor Junction Temperature, T
J
Operating Temperature Range (T
C
), T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
550V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A
12A
27W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–20
°
to +125
°
C
–30
°
to +125
°
C
Electrical Characteristics:
(T
A
= +25
°
C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Voltage
V
O
V
O
V
IN
= 120V, I
O
= 900mA
114.5
116.0
117.5
V
Detecting Voltage (Fixed Output)
NTE1840
I
in
= 7mA
41.3
41.8
42.3
V
NTE1841
42.5
43.0
43.5
V
Load Regulation
Reg
LOAD
V
IN
= 120V, I
O
= 500mA to 900mA
T
C
= –20
°
to +100
°
C, I
in
= 7mA
Initial Value
±
1
±
2
V
Output Voltage Temperature
Coefficient
–
–
mV/
°
C
Saturation Voltage
V
CE(sat)
V
BE(sat)
h
FE
I
CEX
R
thJC
I
C
= 2A, I
B
= 400mA
I
C
= 2A, I
B
= 400mA
I
C
= 1A, V
CE
= 4V
V
CE
= 550V, V
BE
= –1.5V
Between Junction and Stem
Upper Surface
–
–
1.0
V
–
–
1.5
V
DC Current Gain
10
–
40
Collector Cutoff Current
–
–
1.0
mA
°
C/W
Power Transistor Thermal
Resistance
–
1.8
–
Switching Time
t
s
t
f
I
C
= 2A, I
B1
= 300mA, I
B2
= 300mA,
R
L
= 50
–
–
12
μ
s
μ
s
–
–
7
Note 1. Recommended Case Temperature: T
opr
= +100
°
C.
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