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參數(shù)資料
| 型號(hào)： | NTE179 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-PDIP 0 to 70 |
| 中文描述： | 鍺PNP晶體管音頻功率放大器，大電流開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 23K |
| 代理商： | NTE179 |
NTE179
Germanium PNP Transistor
Audio Power Amplifier, High Current Switch
Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switch-
ing applications requiring low saturation voltages, fast switching times, and good safe operating
conditions.
Features:
Low Collector–Emitter Saturation Voltage:
V
CE(sat)
= 0.5V (Max) @ I
C
= 5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CB
Emitter–Base Volatge, V
EB
Continuous Collector Current, I
C
Base Current, I
B
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate above +25
°
C
Operating Junction Temperature, T
J
Storage Junction Temperature, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
40V
90V
2V
25A
5A
106W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.25W/
°
C
–65
°
to + 110
°
C
–65
°
to + 110
°
C
0.8
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
(BR)CBO
I
C
= 100mA, I
B
= 0
V
(BR)EBO
I
E
= 100mA, I
C
= 0
V
CE(sus)
I
C
= 5A
I
CBO
V
CB
= 2V, I
E
= 0
I
CEX
V
CE
= 90V, V
BE(off)
= 0.2V
I
CER
V
CE
= 50V, R
EB
= 100
40
2
40
–
–
–
–
–
–
–
–
–
–
–
–
V
V
V
μ
A
mA
mA
200
20
10
Collector–Emitter Cutoff Current
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