參數(shù)資料
型號(hào)： NTE177
廠(chǎng)商： NTE Electronics, Inc.
英文描述： Precision Voltage Reference 8-SOIC 0 to 70
中文描述： 通用硅整流
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 18K
代理商： NTE177
NTE177
General Purpose Silicon Rectifier
Description:
The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
Peak Repetitive Reverse Voltage, V
RRM
Forward DC Current, I
F
Average Forward Current, I
F(AV)
Repetitive Peak Forward Current, I
FRM
Non–Repetitive Peak Forward Current, I
FSM
(t < 1s, T
J
= +25
°
C)
(t =1
μ
s, T
J
= +25
°
C)
Total Power Dissipation (T
A
= +25
°
C), P
tot
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Maximum Thermal Resistance, Junction–to–Ambient, R
thJA
150V
200V
250mA
250mA
625mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
400mW
+175
°
C
–65
°
to +175
°
C
+375
°
C
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Instantaneous Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 100mA
I
F
= 200mA
V
R
= 150V
V
R
= 150V, T
J
= +150
°
C
I
R
= 100
μ
A
V
R
= 0, f = 1MHz
I
F
= 10mA
When switched from
I
F
= 30mA to I
R
= 30mA,
R
L
= 100
, measured at I
R
= 3mA
Min
–
–
–
–
200
–
–
–
Typ
–
–
–
–
–
1.5
5
–
Max Unit
1.0
1.25
100
100
–
5.0
–
50
V
V
nA
μ
A
V
pF
ns
Reverse Current
I
R
Breakdown Voltage
Diode Capacitance
Differential Forward Resistance
Reverse Recovery Time
V
(BR)R
C
d
r
i
t
r
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