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參數(shù)資料
| 型號(hào)： | NTE172A |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quadruple Operational Amplifier 14-TSSOP 0 to 70 |
| 中文描述： | 達(dá)林頓硅NPN晶體管前置放大器，中速開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE172A |
NTE172A
Silicon NPN Transistor
Darlington Preamp, Medium Speed Switch
Description:
The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier
input stages requiring input impedances of several megohms or extremely low level, high gain, low
noise amplifier applications.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±
1/32” from case for 10sec max.), T
L
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
40V
40V
12V
300mA
500mA
50mA
400mW
4mW/
°
C
–65
°
to +125
°
C
–65
°
to +150
°
C
. . . . . . . .
+260
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
I
C
= 0.1
μ
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 0.1
μ
A, I
E
= 0
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 100mA
V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, T
A
= +100
°
C
40
–
–
V
Collector–Emitter Breakdown Voltage
40
–
–
V
Emitter–Base Breakdown Voltage
12
–
–
V
DC Current Gain
7000
–
70000
20000
–
–
Collector Cutoff Current
I
CBO
–
–
100
nA
μ
A
–
–
20
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