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參數(shù)資料
| 型號： | NTE152 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Audio Power Amplifier, Switch |
| 中文描述： | 硅互補(bǔ)晶體管音頻功率放大器，開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 21K |
| 代理商： | NTE152 |
NTE152 (NPN) & NTE153 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
type package designed for general purpose medium power switching and amplifier applications.
Features:
Good Linearity of h
FE
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90V
90V
5V
4A
–4A
3A
40W
+150
°
C
–55
°
to +150
°
C
Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
V
(BR)CEO
I
C
= 50mA, I
B
= 0
I
CBO
V
CB
= 90V, I
E
= 0
I
EBO
V
EB
= 5V, I
C
= 0
h
FE1
V
CE
= 5V, I
C
= 0.5A
h
FE2
V
CE
= 5V, I
C
= 3A
V
CE(sat)
I
C
= 3A, I
B
= 0.3A
V
BE
V
CE
= 5V, I
C
= 3A
f
T
V
CE
= 5V, I
C
= 0.5A
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
Test Conditions
Min
90
–
–
40
15
–
–
3
–
Typ
–
–
–
–
–
–
–
8
85
Max Unit
–
20
10
200
–
1.5
1.5
–
–
V
μ
A
μ
A
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Transition Frequency
Collector Output Capacitance
V
V
MHz
pF
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