參數(shù)資料
型號(hào)： NTE15021
廠商： NTE Electronics, Inc.
英文描述： Integrated Circuit TV Fixed Voltage Regulator
中文描述： 集成電路電視固定穩(wěn)壓器
文件頁數(shù)： 1/2頁
文件大小： 20K
代理商： NTE15021
NTE15012 & NTE15018 thru NTE15021
Integrated Circuit
TV Fixed Voltage Regulator
Features:
Triple Diffused Darlington Transistor Chips Incorporated
Compact Plastic Package with Indistry Standard Reliability
Output Voltage is Pre–Fixed – No External Adjustment is Required
Absolute Maximum Ratings:
Peak Input Voltage, V
IN
Output Current, I
O
Power Dissipation (T
C
= +100
°
C), P
D
Maximum Power Transistor Junction Temperature, T
J
Operating Temperature Range (T
C
), T
opr
Storage Temperature Range, T
stg
200V
1A
40W
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–30
°
to +125
°
C
–30
°
to +125
°
C
Electrical Characteristics:
(T
A
= +25
°
C unles otherwise specified)
Parameter
Symbol
Output Voltage
NTE15018
NTE15021
NTE15020
NTE15019
NTE15012
Load Regulation
V
LOAD
I
O
= 250mA to 500mA
Output Voltage Temperature
Coefficient
Input–Output Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 0
Input–Output Voltage
DC Current Gain
Overload Capacity
Power Transistor Thermal
Resistance
Input–Output Cutoff Current
Test Conditions
Min
Typ
Max
Unit
V
OUT
V
AC
= 100V, I
In
= 6mA
V
AC
= 120V, I
In
= 7mA
114
122
124
129
134
–
–
115
123
125
130
135
±
1
7
116
124
126
131
136
–
–
V
V
V
V
V
V
V
IN
= V
AC
, I
O
= 500mA,
T
C
= –20
°
to +100
°
C
mV/
°
C
–
–
–
–
–
1.5
–
6500
–
–
V
V
V
CEO
h
FE
T
S/B
R
thJC
I
CEO
= 10mA, I
B
= 0
I
C
= 1A, V
CE
= 4V
V
CE
= 100V, I
C
= 1A
Between Junction and Stem
Upper Surface
V
CE
= 200V, Open
(Between Pin1 & Pin2)
t = 65msec
(Between Emitter–Base)
200
1500
1.0
–
sec
°
C/W
1.25
I
CEO
–
–
100
μ
A
Output–Base Reverse Current
Capacity
I
EB(S/B)
300
–
–
mA
Note 1. Recommended Case Temperature: T
opr
(T
C
) = +100
°
C.
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