參數(shù)資料
型號(hào)： NTE127
廠(chǎng)商： NTE Electronics, Inc.
英文描述： Germanium PNP Transistor Horizontal Output Amplifier
中文描述： 鍺PNP晶體管水平輸出放大器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 21K
代理商： NTE127
NTE127
Germanium PNP Transistor
Horizontal Output Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
MF
≤
+55
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
(opr)
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, R
thJC
Lead Temperature (During Soldering, 10sec Max), T
L
320V
60V
2V
10A
+4, –1A
5W
–65
°
to +85
°
C
–65
°
to +85
°
C
1.5
°
C/W
+230
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Collector–Emitter Saturation Voltage
Symbol
V
(BR)CES
I
C
= 0.025A, V
EB
= 0
V
(BR)EBO
I
E
= 100mA, I
C
= 0
I
CBO
V
CB
= 10V, I
E
= 0
V
CE(sat)
I
C
= 6A, I
B
= 400mA
I
C
= 3A, I
B
= 200mA
h
FE
V
CE
= 3V, I
C
= 6A
V
BE
I
C
= 6A, I
B
= 400mA
t
s
+ t
f
Test Conditions
Min
320
2
–
–
–
15
–
–
Typ Max Unit
–
–
–
–
–
200
–
1.5
–
1.5
–
–
0.8
–
–
1.2
V
V
μ
A
V
V
DC Current Gain
Base–Emitter Voltage
Turn–Off Time
V
μ
s
Note 1. This device is for
replacement only
and
NOT
intended for new design. Therefore, these
specifications are for
reference only
and strictly for determining the suitability of this device
as a replacement in a working circuit.
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