參數(shù)資料
型號(hào)： NTD95N02R
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 95Amps, 24Volts(95A, 24V功率MOSFET)
中文描述： 32 A, 24 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA-01, DPAK-3
文件頁數(shù)： 1/6頁
文件大?。?/td> 71K
代理商： NTD95N02R
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 2
1
Publication Order Number:
NTD95N02R/D
NTD95N02R
Power MOSFET
95 Amps, 24 Volts
NChannel DPAK
Features
High Power and Current Handling Capability
Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low Gate Charge to Minimize Switching Losses
PbFree Packages are Available
Applications
CPU Motherboard Vcore Applications
High Frequency DCDC Converters
Motor Drives
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
R
JC
P
D
24
V
GatetoSource Voltage
±
20
V
Thermal Resistance, JunctiontoCase
Total Power Dissipation @ T
A
= 25
°
C
Drain Current –
Continuous @ T
A
= 25
°
C, Limited by Package
Continuous @ T
A
= 25
°
C, Limited by Wires
Thermal Resistance, Junctionto Ambient
(Note 1)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
Thermal Resistance, JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
Operating Junction and Storage Temperature
I
D
I
D
1.45
86
95
32
°
C/W
W
A
A
R
JA
P
D
I
D
R
JA
52
2.4
15.8
°
C/W
W
A
P
D
I
D
T
J
,
T
STG
100
1.25
12
°
C/W
W
A
55 to
150
°
C
Continuous Source Current (Body Diode)
I
S
45
A
Single Pulse DraintoSource Avalanche
Energy – (V
DD
= 25 V, V
G
= 10, I
PK
= 13 A,
L = 1 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 seconds)
E
AS
84
mJ
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
http://onsemi.com
D
S
G
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX*
24 V
4.5 m @ 10 V
5.9 m @ 4.5 V
95 A
*I
MAX in the product summary table is continuous
and steady at 25
°
C.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y
WW
T95N02R
G
= Year
= Work Week
= Device Code
= PbFree Package
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Y
T
N
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
STYLE 2
123
4
Y
T
N
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD95N02R-001 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD95N02R-001G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
NTD95N02R-1G 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD95N02RG 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD95N02RT4 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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