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參數(shù)資料
| 型號： | NTD60N02R-1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| 中文描述： | 32 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NTD60N02R-1G |
NTD60N02R
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK
CASE 369C01
ISSUE O
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.180
0.025
0.020
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.57
0.63
0.51
0.89
3.93
MAX
6.22
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.040
0.050
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTD60N02R-35G | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02RG | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02RT4 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02RT4G | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N03 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述:Power MOSFET 60A,28V N-CH 制造商:ON Semiconductor 功能描述:Power MOSFET 60Amps, 28Volts N-Channel DPAK |
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