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參數(shù)資料
| 型號： | NTD4810N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 54 A(30V, 54A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，54甲（30V的，54A條，功率MOSFET的） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | NTD4810N |
NTD4810N
http://onsemi.com
8
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D01
ISSUE B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1
2
3
4
V
S
A
K
T
SEATING
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.090 BSC
0.034
0.018
0.350
0.180
0.025
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MAX
6.35
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.380
0.215
0.040
0.050
1.01
0.58
9.65
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
ON Semiconductor
and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
NTD4810N/D
PUBLICATION ORDERING INFORMATION
N. American Technical Support
: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
LITERATURE FULFILLMENT
:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone
: 3036752175 or 8003443860 Toll Free USA/Canada
Fax
: 3036752176 or 8003443867
Toll Free USA/Canada
Email
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:
www.onsemi.com
Order Literature
: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD4810N-1G | 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4810N-35G | 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4810NH | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK |
| NTD4810NH-1G | 功能描述:MOSFET N-CH 30V 8.6A IPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTD4810NH-35G | 功能描述:MOSFET N-CH 30V 8.6A IPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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